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| UNISONIC TECHNOLOGIES CO., LTD UP2518 LOW VCE(SAT) PNP SILICON POWER TRANSISTORS FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97m at 1.5A) * High collector current capability(1.5A) * High peak pulse current up to 6A * High collector current gain PNP EPITAXIAL SILICON TRANSISTOR 3 1 2 SOT-23 *Pb-free plating product number: UP2518L PIN CONFIGURATION PIN NO. PIN NAME 1 EMITTER 2 BASE 3 COLLECTOR ORDERING INFORMATION Order Number Normal Lead Free Plating UP2518-AE3-6-R UP2518L-AE3-6-R Package SOT-23 Packing Tape Reel MARKING INFORMATION Y18 www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., LTD 1 of 4 QW-R206-083,A UP2518 ABSOLUTE MAXIMUM RATING (Ta = 25 PNP EPITAXIAL SILICON TRANSISTOR ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current (Note 2) IPEAK -6 A Continuous Collector Current IC -1.5 A Base Current IB -500 mA Power Dissipation at Ta =25C(Note 3) PD 625 mW Junction Temperature TJ +150 Storage Temperature TSTG -40~+150 Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width=300ms. Duty cycle 2% 3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm ELECTRICAL CHARACTERISTICS (Ta = 25 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO ICES , unless otherwise specified) MIN -20 -20 -5 TYP -65 -55 -8.8 MAX UNIT V V V nA nA nA mV mV mV V V TEST CONDITIONS IC= -100A IC= -10mA IE= -100A VCB= -15V VEB= -4V VCES= -15V IC= -100mA, IB= -10mA Collector-Emitter Saturation Voltage VCE(SAT) IC= -1A, IB= -20mA IC= -1.5A, IB= -50mA Base-Emitter Saturation Voltage VBE(SAT) IC= -1.5A, IB= -50mA Base-Emitter Turn-On Voltage VBE(ON) IC= -2A, VCE= -2V IC= -10mA, VCE= -2V IC= -100mA, VCE= -2V IC= -2A, VCE= -2V DC Current Gain hFE IC= -4A, VCE= -2V IC= -6A, VCE= -2V Transition Frequency fT IC= -50mA, VCE =-10V, f=100MHz Output Capacitance COB VCB= -10V, f=1MHz VCC= -10V, IC= -1A Turn-On Time t(ON) Turn-Off Time t(OFF) IB1= IB2= -20mA *Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2% 300 300 150 35 15 150 -16 -130 -145 -0.87 -0.81 475 450 230 70 30 180 21 40 670 -100 -100 -100 -40 -200 -220 -1.0 -1.0 30 MHZ pF ns ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-083,A UP2518 TYPICAL CHARACTERISTIC PNP EPITAXIAL SILICON TRANSISTOR VCE(SAT) vs IC 1 +25 VCE(SAT) vs IC 0.6 0.5 IC/IB=30 VCE(SAT) - (V) 100m VCE (V) 0.4 0.3 0.2 0.1 100 25 -40 10m IB/IC=50 IB/IC=30 IB/IC=10 1m 1m 10m 100m 1 10 0.0 1mA 10mA 100mA 1mA 10mA Collector Current, IC(A) Collector Current hFE vs IC 1.4 100 Normalised Gain 1.2 25 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 0 10A 225 450 VCE=2V Typical Gain (hFE) 1.4 1.2 VBE (V) 1.0 0.8 0.6 0.4 0.2 0.0 1mA -40 25 IC/IB=10 VBE(SAT) vs IC 10mA 100mA 1A 10A Collector Current Collector Current VBE(SAT) vs IC 1.2 1.0 0.8 VBE (V) 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 0.1 -40 25 VCE=2V Safe Operating Area 10 1.0 IC (A) D.C. 1s 100ms 10ms 1ms 100 s 0.1 Single Pulse Test Ta=25 0.1 1.0 VCE (V) 10 100 Collector Current UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-083,A UP2518 Derating Curve PNP EPITAXIAL SILICON TRANSISTOR THERMAL CHARACTERISTICS AND DERATING INFORMATION Maximum Transient Thermal Resistance 200 D=1.0 Maximum Dissipation (mW) /W 1000 800 600 400 200 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 f1 D = f1 / fP fP 150 Thermal Resistance 50 D=0.2 D=0.1 D=0.5 Devices were mounted on a 15mmx15mm ceramic substrate 0 0.1ms 1ms 10ms 0.1ms 1s 10s 200 Ambient Temperature ( Pulse Width UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Sin gle Pu ls 100 D=0.5 e 4 of 4 QW-R206-083,A |
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